rd generation 650V class 4H-SiC power MOSFET discre"/>
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Evaluation of Temperature-Humidity-Reverse Bias Robustness of 3rd Generation 650V Class 4H-SiC Discrete Power MOSFET Devices

Muhammad Waseem,Mesfin Seid Ibrahim,Waseem Abbas, Chang Lu, Hou Yuluo,Hiu Hung Lee, Zhang Hao,Ka-Hong Loo

2023 IEEE International Integrated Reliability Workshop (IIRW)（2023）

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关键词
SiC Power MOSFETs,Accelerated degradation test,HV-H3TRB test,MOSFET aging,Humidity,Reliability
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