New Insights Into the Physics-Based Statistical Compact Modeling of Flicker Noise in Advanced FinFET Technology
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
1/f noise,Nanoscale devices,Fluctuations,Resistance,FinFETs,Semiconductor device modeling,Scattering,Access resistance (AR),flicker noise,inelastic (de)trapping,noise variation,quasi-ballistic transport
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