The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf $_{\text{0}.\text{5}}$ Zr $_{\text{0}.\text{5}}$ O $_{\text{2}}$
IEEE Transactions on Electron Devices（2024）
关键词
FinFET,Hf $_{\text{0}.\text{5}}$ Zr $_{\text{0}.\text{5}}$ O $_{\text{2}}$ (HZO),thickness,variation
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