A Full W-Band InP LNA with Enhanced Gain Flatness

Yutong Wang,Bo Li,Feng Lin,Houjun Sun,Hongjiang Wu,Chunliang Xu,Yuan Fang, Zhiqiang Li

IEEE Transactions on Circuits & Systems II Express Briefs（2024）

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Key words

Broadband,high electron mobility transistor,Indium Phosphide,low-noise amplifier,W-band,Broadband,high electron mobility transistor,Indium Phosphide,low-noise amplifier,W-band

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