Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stackCarlo De Santi,Manuel Fregolent,Enrico Brusaterra,Kornelius Tetzner,Joachim Würfl,Matteo Buffolo,Gaudenzio Meneghesso,Enrico Zanoni,Matteo MeneghiniOxide-based Materials and Devices XV(2024)引用 0|浏览5暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要