Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

To promote the application of SiC devices in extreme environments, the irradiation damages of 4H-SiC Schottky barrier diodes (SBDs) irradiated with 6 MeV Au ions under room temperature (RT) and low temperature (LT) were investigated in this work. Deep level transient spectroscopy (DLTS) was used to analyze the changes in primary defects. DLTS measurements indicated the presence of six deep levels labeled EN, E1, E2, E3, E4 and E5. Notably, the peak positions for the samples irradiated under RT shifted to the right compared to those irradiated at LT with increasing fluence. This means that the deeper energy defects are produced under RT irradiation. The experimental results also demonstrated that the HI irradiation-induced defects are mainly located at interface between metal and SiC, especially the metal–semiconductor (M−S) interface edge. Therefore, these results suggest that the evolution of defects in SiC devices under LT and RT irradiation,which is helpful to provide its application in power electronics and extreme environments.