Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells

V. S. Kalinovskii,E. I. Terukov,K. K. Prudchenko, A. A. Bazeley,E. V. Kontrosh,I. A. Tolkachev,A. A. Titov

Technical physics letters（2023）

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摘要

The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5 × 1014–1 × 1015 cm–2 has been studied. Studies have shown that the smallest degradation of the “saturation” currents of the diffusion current flow mechanism from J0d ≤ 5 × 10–13 to J0d ≤ 3 × 10–12 A/cm2 and efficiency from 19.2 to 13.6

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关键词

heterostructure silicon solar cells,saturation currents,efficiency,radiation resistance,1 MeV electrons,low orbit satellite communication

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