A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Logic gates,Field effect transistors,Indium tin oxide,Thermal stability,Temperature measurement,Electrodes,Tin,Atomic layer deposition (ALD),InGaOx (IGO),nanosheet (NS) FET,oxide semiconductor (OS)
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