Monolithic Integration of GaAs Based Compounds on Silicon Platform for Photonic and Optoelectronic Devices

The integration of III-V compound semiconductors on a silicon platform has emerged as a transformative approach to enhance the performance and functionality of photonic and optoelectronic devices. This paper presents recent achievements, challenges, and future prospects of GaAs monolithic integration on silicon with a specific focus in the development of near-infrared (NIR) emitters and photodetectors. We address the challenges associated with III-V monolithic integration on silicon and its compatibility with CMOS processes. These challenges include lattice mismatches, thermal management, and process scalability. We present our latest results obtained on near infrared resonant cavity enhanced photodetector and light emitting devices integrated onto a nominal Si(001) substrate. The devices structures have been optimized by incorporating active regions based on InGaAs/GaAsP strained-layer superlattices and GaAs/AlGaAs distributed Bragg Reflectors. We also show an alternative solution to fabricate low-threshold emitters based on III-As membranes and lateral injection devices.