Textured piezoelectric ceramic CaBi 2 Nb 2 O 9 obtained by a conventional solid-state reaction

Piezoelectric ceramics working at high temperatures place high demands on the piezoelectric and insulating properties of the materials. Although CaBi 2 Nb 2 O 9 (CBNO) in bismuth layer-structured ferroelectrics (BLSFs) exhibits a rather high Curie temperature of 940 degrees C, its piezoelectric coefficient ( d 33 -6 pC/N) and remanent polarization ( P r -2 mu C/cm 2 ) are low. Here, we used a typical solid-state reaction approach to create strong textured piezoelectric ceramics CBNO with a Lotgering factor F 00l of 70% to improve the electrical characteristics of the material. The ferroelectric, dielectric, and piezoelectric properties perpendicular to the pressing direction were superior to those parallel to the pressing direction. Furthermore, the addition of V 2 O 5 can generate pseudotetragonal distortion in CBNO- x wt% V 2 O 5 ceramics, which has been shown to improve polarization switching and hence the piezoelectric capabilities of CBNO-based ceramics. As a result, the rather excellent electrical properties with a large d 33 of 21.5 pC/N, P r of 18.4 mu C/cm 2 , and T C of 955 degrees C can be obtained simultaneously. Our results provide valuable guidance for the production of textured ceramics with exceptional overall performance in BLSFs.