Ga₂O₃ Vertical FinFET with Integrated Schottky Barrier Diode for Low-Loss Conduction

IEEE TRANSACTIONS ON ELECTRON DEVICES(2024)

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关键词
FinFETs,Logic gates,Schottky diodes,Electric breakdown,Gallium,Schottky barriers,Field effect transistors,FinFET,Schottky barrier diode (SBD),conduction losses,beta-gallium oxide (Ga2O3)
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