Improving Optoelectronic Properties of InP/InAs Nanowire P-I-n Devices with Telecom-Band Electroluminescence

Nanowire-based structure has attracted much interest for its high potential applications in fundamental research and technology. Due to the inadequate understanding of nanowire growth and structural control, optoelectronic property still needs to be improved for nanowirebased optical devices working in telecom band range. Here we report enhancement of the optoelectronic property of InP/InAs heterostructure nanowire light emitting diodes with telecomband electroluminescence. Due to a high leakage current, nanowire-based devices have shown a low open -circuit voltage of 0.084 V. We clarify that the high leakage current is caused by a conductive thin shell layer on nanowire sidewalls. By a surface wet etching, these nanowire-based devices show a low leakage current and exhibits an open -circuit voltage of 0.412 V. These results indicate an improved optoelectronic performance of InP/InAs nanowire light emitting diodes by enhanced understanding of nanowire growth and structural control. This work paves the way for high-performance nanowire-based optoelectronic devices working in telecom band range.