Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses

In present work, electronic transport behavior of Te (1- x ) (GeSe 0.5 )Sc x (0 ≤ x ≤ 0.15) glasses have been studied. The material having disc shaped geometry have been utilized for I – V measurements at different temperature less than glass transition temperature. Compensation effect has been observed in thermally activated resistive switching in studied glasses. Poole–Frenkel mechanism for conduction has been observed in the glasses studied. By experimental data fitting, bipolar hopping has been observed in the samples. By CBH model analysis, density of defect states ( N ) has been evaluated. The compositional dependence of N shows minima at x = 0.1 which can be explained in terms of mechanically stabilized structure.