Characterization of Trap Density in Indium-Gallium-Zinc-Oxide Thin Films by Admittance Measurements in Multi-Finger MOS Structures

We perform trap density (Dt) extraction through admittance measurements on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin films using multi-finger MOS structures. We investigate the impact of channel length (Lch) on C-V and G-V characteristics and demonstrate a reliable trap density extraction method in short channel devices. The method is validated for pure and Magnesium-doped a-IGZO (Mg:IGZO). The experimental results are consistent with simulations based on a distributed network model.