Investigation of -Fe2O3 and Cr doped -Fe2O3 Based Nano-Film as Resistive Switching Material for ReRAM Device Application

Ferric oxide (alpha-Fe2O3) based nanoparticles show a vast number of applications along with resistive switching. In the recent study, we synthesized alpha-Fe2O3 nanoparticles and Cr3+ doped alpha-Fe2O3 to see the variation in the resistive switching property with chromium doping. XRD and FESEM characterizations have been carried out to confirm the structural and morphological properties of both alpha-Fe2O3 and CrFeO3 nanoparticles. Optical study has been done by using UV-visible spectroscopy and a decrease in band gap was observed with the chromium doping. I-V characteristics have been studied at room temperature for the synthesized material. The resistive switching effect for synthesized material is confirmed by applying negative and positive bias voltage for which current shows different values. CrFeO3 shows a larger loop of hysteresis as compared to alpha-Fe2O3 confirming a better material for ReRAM application.