The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS（2023）
Key words
GaN,SiO2,ultraviolet photodetector,metal-semiconductor-metal,metal-insu-lator-semiconductor
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