A Target-Read Retry Scheme for 3D Charge Trap NAND Flash Memory
2023 International Electron Devices Meeting (IEDM)（2023）
关键词
Flash Memory,NAND Flash,NAND Flash Memory,Strong Dependence,Threshold Voltage,Bit Error Rate,Strong Pattern,Bit Error,Pattern Recognition Techniques,Simple Recognition,Unique Dependence,Interference Effect,Neighborhood Effects,Loss Of Charge
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