1-Phototransistor-1-Threshold Switching Optoelectronic Neuron for In-Sensor Compression via Spiking Neuron Network

In this work, we demonstrate a 1-Phototransistor-1-Threshold Switching (1PT1TS) optoelectronic neuron with an In 2 O 3 PT and NbO x TS device for in-sensor compression paradigm, which is achieved by exploiting continuous-time data representation and frequency multiplexing—without external electrical circuits nor ADCs. The In 2 O3 PT and NbO x TS devices exhibit high photoresponsivity (10 ⁴ mA/W) and endurance (10 ⁸ cycles), respectively. Our approach enables a single channel to perceive sensory information from multiple inputs in parallel with read errors of only 2.2%. Compared to the conventional sensory processing framework with separated sensing and compression modules, our 1PT1TS optoelectronic neuron arrays can directly sense, compress, encode, and interpret sensory data (sampling rate <20%) with ultra-low energy consumption (0.1 nJ), high recognition accuracy (>80%), and nearly zero accuracy loss (~0%) based on the spiking neuron network.