Dependence of the Polar Phonon Limited Mobility in the Two-Dimensional Electron Gas in GaInAs/InP Heterostructures on Hydrostatic Pressure and Carrier Concentration

We report measurements of the pressure dependence of the mobility of a two-dimensional electron gas in GaInAs/InP single and multiple quantum well systems and at a single heterojunction. The mobility dependence on both carrier density and effective mass is derived and shown to be the same in each system. Current theories of polar optic phonon scattering do not explain the mobility variation with carrier density but can describe the effective mass dependence.