15 GHz GaN Hi–Lo IMPATT Diodes with Pulsed Peak Power of 25.5 W

Seiya Kawasaki,Takeru Kumabe,Manato Deki,Hirotaka Watanabe,Atsushi Tanaka,Yoshio Honda,Manabu Arai,Hiroshi Amano

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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关键词

Gallium nitride,Schottky diodes,Junctions,Electric fields,Tunneling,Doping,Power generation,Avalanche breakdown,gallium nitride (GaN),impact ionization avalanche transit time (IMPATT) diode,microwave oscillation,vertical p-n diode (PND)

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