Three-dimensional Integration of Two-Dimensional Field-Effect Transistors

In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as ‘More Moore’ 1 but also introduces multifunctionalities for ‘More than Moore’ 2 technologies. Although silicon-based 3D integrated circuits are commercially available 3 – 5 , there is limited effort on 3D integration of emerging nanomaterials 6 , 7 such as two-dimensional (2D) materials despite their unique functionalities 7 – 10 . Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS 2 with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS 2 and WSe 2 with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS 2 FETs (channel length, L CH = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension.