A GaN Lateral Bidirectional ESD Clamp Based on the Floating-Gate MBS and a Regulating Capacitor
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Electrostatic discharges,HEMTs,Logic gates,Clamps,Capacitors,Cathodes,Anodes,Bidirectional electrostatic discharge clamp (B-ESD-C),electrostatic discharge (ESD),p-GaN high-electron mobility transistor (HEMT),secondary breakdown current,triggering voltage
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