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Improved Properties of Post-Deposition Annealed Ga2O3/SiC and Ga2O3/Al2O3/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering

Hee-Jae Lee,Geon-Hee Lee,Seung-Hwan Chung,Dong-Wook Byun,Michael A. Schweitz,Dae Hwan Chun, Nack Yong Joo,Minwho Lim,Tobias Erlbacher,Sang-Mo Koo

Micro（2023）

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Key words
gallium oxide,heterostructure,wide bandgap,transistor,aluminum oxide,semiconductor
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