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Evaluation of HPK N Plus -P Planar Pixel Sensors for the CMS Phase-2 Upgrade

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT(2023)

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Abstract
To cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), scheduled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determined by the long operation time of 10 years with an instantaneous peak luminosity of up to 7.5 x 1034 cm-2 s-1 in the ultimate performance scenario. Depending on the radial distance from the interaction point, the silicon sensors will receive a particle fluence corresponding to a non-ionising energy loss of up to ?eq = 3.5 x 1016 cm-2. This paper focuses on planar pixel sensor design and qualification up to a fluence of ?eq = 1.4 x 1016 cm-2. For the development of appropriate planar pixel sensors an R&D program was initiated, which includes n+-p sensors on 150 mm (6") wafers with an active thickness of 150 mu m with pixel sizes of 100 x 25 mu m2 and 50 x 50 mu m2 manufactured by Hamamatsu Photonics K.K. (HPK). Single chip modules with ROC4Sens and RD53A readout chips were made. Irradiation with protons and neutrons, as well was an extensive test beam campaign at DESY were carried out. This paper presents the investigation of various assemblies mainly with ROC4Sens readout chips. It demonstrates that multiple designs fulfil the requirements in terms of breakdown voltage, leakage current and efficiency. The single point resolution for 50 x 50 mu m2 pixels is measured as 4.0 mu m for non-irradiated samples, and 6.3 mu m after irradiation to ?eq = 7.2 x 1015 cm-2.
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Pixel,Silicon,Sensors,CMS,HL-LHC,Radiation hardness
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R. Diener,J. Dreyling-Eschweiler, H. Ehrlichmann,I. M. Gregor,U. Koetz, U. Kraemer,N. Meyners, N. Potylitsina-Kube, A. Schuetz,P. Schuetze,M. Stanitzki
2018

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要点】:本文评估了HPK N Plus -P型平面像素传感器,以满足CMS实验在HL-LHC高亮度升级中的性能要求,创新点在于对新型平面像素传感器的设计和性能测试。

方法】:通过研究150 mm(6英寸)n+-p型硅片上制造的100 x 25 μm²和50 x 50 μm²像素尺寸的传感器,并使用ROC4Sens和RD53A读出芯片进行单芯片模块的测试。

实验】:对传感器进行了质子和中子辐照以及DESY的广泛测试束实验,数据集主要关注ROC4Sens读出芯片的多种组装。实验结果表明,这些设计在击穿电压、漏电流和效率方面均符合要求,未辐照样本的50 x 50 μm²像素的单点分辨率为4.0 μm,辐照至?eq = 7.2 x 10¹⁵ cm⁻²后的单点分辨率为6.3 μm。