谷歌浏览器插件
订阅小程序
在清言上使用

A Wide Dynamic Range Rectifier Based on HEMT With a Variable Self-Bias Voltage

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS(2024)

引用 0|浏览6
暂无评分
摘要
This brief focuses on a highly efficient rectifier based on a high-electron-mobility transistor (HEMT) with a wide dynamic range of input power. Due to the nonlinear characteristics of HEMT, the impedance mismatch at different input power levels is a major challenge in rectifier design. Herein, a variable voltage gate self-bias network is proposed. It can dynamically generate a DC voltage according to the input power level, and continuously provide the optimal bias for the HEMT, thereby improving the RF to DC conversion efficiency in a wide input power range. This design does not require any external sensing or dynamic control circuit. The power needed by the self-bias network is provided using a weak coupling structure placed at the input port, which couples a small amount of the received RF power to operate the self-bias network. It is demonstrated that the proposed rectifier can achieve a dynamic operating power range of 24 dB (from 1 to 25 dBm) for over 60% conversion efficiency, or 16 dB for over 70% conversion efficiency in the measurement.
更多
查看译文
关键词
Rectifiers,HEMTs,Logic gates,Couplings,Radio frequency,Voltage measurement,Transmission line measurements,Wireless power transmission,rectifiers,microwave circuits
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要