Переход Между Законами Мотта И Аррениуса В Температурных Зависимостях Сопротивлений Сильно Легированных Бором Дельта-Слоев В Искусственном Алмазе

Experimental temperature dependence of the resistiv- ity of thin (1−3 nm) highly boron-doped (close to the threshold of the phase transition into a state with a metallic-type conductivity) delta-layers in chemically vapor deposited (CVD) diamond in a broad temperature range from ∼ 100 to ∼ 500 K can be described by Mott’s two-dimensional law (hole ”hops“ between localized states with a temperature-dependent average ”hop“ length) in a low temperature region and Arrhenius’ law (hole ”hops“ between the nearest localized states) in a high temperature region. The crossover between them takes place at 230−300 K. The potentials of hole localized states are of a long-range, e. g. Coulomb’s, type, the static dielectric permittivities of delta-layers are by several times larger than those of undoped CVD diamond.