Publisher's Note: “Β-Ga2o3 Trench Schottky Diodes by Low-Damage Ga-atomic Beam Etching” [appl. Phys. Lett. 123, 023503 (2023)]

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Sheikh Ifatur Rahman, Chandan Joishi, Siddharth Rajan; Publisher's Note: “β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching” [Appl. Phys. Lett. 123, 023503 (2023)]. Appl. Phys. Lett. 4 September 2023; 123 (10): 109901. https://doi.org/10.1063/5.0173754 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search