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Quantification of Si Dopant in β-Ga 2 O 3 -Based Semiconductor Gas Sensors by Total Reflection X-Ray Fluorescence Spectroscopy (TXRF)

D. G. Filatova, A. P. Bogdanova,V. V. Krivetskiy,T. N. Penkina,M. N. Rumyantseva

Inorganic Materials（2023）

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Key words
total reflection X-ray fluorescence spectroscopy (TXRF),silicon determination by TXRF,β-Ga2O3
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