Conduction Mechanism of Schottky Contacts Fabricated on Etch Pits Originating from Single Threading Dislocation in a Highly Si-doped HVPE GaN Substrate

Toshikazu Sato,Takeaki Hamachi,Tetsuya Tohei,Yusuke Hayashi,Masayuki Imanishi,Shigeyoshi Usami,Yusuke Mori,Akira Sakai

Materials science in semiconductor processing（2023）

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