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Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 Nm Node Junctionless Multi-Nanowire FETs

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY(2024)

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Self-heating effect (SHE),junctionless multi-nanowire (JL-MNW) GAA FET,lattice temperature,thermal resistance,delay time,hot carrier injection (HCI) lifetime,bias temperature instability (BTI) lifetime
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