Theoretical Exploration of Promising Optoelectronic Two-Dimensional Materials MSi2N4 (m=cr, Mo, W)

Songtao Xue,Haiming Huang,Wenyu Zhao,Qiang Yu,Juntao Yang,Rui Tong,Yonghong Hu,Amel Laref,Shijun Luo

VACUUM（2024）

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First-principle,Electronic structures,Heterojunction,Band gap

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