Ferroelectric Polarization Assisted Trapping Memcapacitor

Luqiu Chen,Guangdi Feng,Jianquan Liu,Shenglan Hao,Qiuxiang Zhu,Bobo Tian,Chungang Duan

2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT)（2023）

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Abstract
In this letter, a ferroelectric memcapacitor based on Hf 0.5 Zr 0.5 O 2 (HZO) deposited by atomic layer deposition (ALD) is fabricated. The synergistic effect of ferroelectric polarization and charge trapping behavior is used for achieving reliable memory properties and controllable intermediate states. The memcapacitors themselves generate no joule heat during the processing. This work paves a way for ultralow-power memory based on ferroelectric memcapacitors.
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Key words
memcapacitor,ferroelectric,trapping,HZO,memory
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