Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm

S. Subhechha,N. Rassoul,A. Belmonte,H. Hody,H. Dekkers,M. J. van Setten,A. Chasin,S.H. Sharifi,S. Sutar,L. Magnarin, U. Celano,H. Puliyalil,S. Kundu,M. Pak,L. Teugels,D. Tsvetanova,N. Bazzazian,K. Vandersmissen,C. Biasotto,D. Batuk,J. Geypen,J. Heijlen,R. Delhougne,G. S. Kar

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

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Key words
raised contacts,oxygen tunnel module,CAAC-IGZO,scaled a-IGZO channel,Record Ion,front-gated amorphous IGZO-TFTs,2T0C 3D-DRAMs,Vt >,ultra-low,raised contact devices,voltage 0.3 V,voltage 0.0 V
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