Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

We demonstrate gate-all-around (GAA) multi-bridge channel FETs (MBCFETs) with sub-20 nm nanosheet thickness fabricated through an S/D regrowth process. Working devices with three-level stacked In 0.53 Ga 0.47 As nanosheets as thin as 15 nm have been fabricated using selectively regrown n+ In 0.53 Ga 0.47 As contact formation and a combination of precision dry etching and selective wet etching for In 0.52 Al 0.48 As sacrificial layers against In 0.53 Ga 0.47 As nanosheets. The devices also feature a high-k HfO 2 and TiN metal gate by ALD in a cross-coupled manner, surrounding the three-level stacked In 0.53 Ga 0.47 As nanosheets. MBCFETs with L g = 130 nm, W NS = 300 nm and t NS = 15 nm exhibit a record combination of I ON = 2.2 mA/µm and g m_max = 5.7 mS/µm at V DS = 0.8 V, making efficient use of each multi-bridge channel along the S/D and gate width directions.