Electrical properties of $\beta$-Ga2O3 homoepitaxial layer measured by terahertz time-domain spectroscopy

Verdad C. Agulto,Kazuhiro Toya,Thanh Nhat Khoa Phan,Hideaki Kitahara,Valynn Katrine Mag-usara,Melvin John F. Empizo,Toshiyuki Iwamoto,Ken Goto,Hisashi Murakami,Yoshinao Kumagai,Nobuhiko Sarukura,Masashi Yoshimura,Makoto Nakajima

2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)（2020）

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摘要

Gallium oxide (Ga ₂ O ₃ ) bulk substrate and homoepitaxial layer were investigated using terahertz time-domain spectroscopy in the frequency region from 0.2 to 3.0 THz and with polarization along the a crystal axis. From the transmittance measurement, the refractive index spectra of the bulk substrate and the epilayer were obtained. The carrier density, electron mobility, and resistivity of the epilayer were then extracted by employing the Drude-Lorentz model.

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关键词

terahertz time-domain spectroscopy,transmittance measurement,bulk substrate,Drude-Lorentz model,electron mobility,carrier density,refractive index spectra,homoepitaxial layer,gallium oxide bulk substrate,crystal axis,epilayer,frequency 0.2 THz to 3.0 THz,Ga2O3

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