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Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties

Sergey Balakirev,Danil Kirichenko,Natalia Chernenko,Nikita Shandyba,Sergey Komarov,Anna Dragunova,Natalia Kryzhanovskaya,Alexey Zhukov,Maxim Solodovnik

CRYSTALS（2023）

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关键词
molecular beam epitaxy,InAs,GaAs,quantum dots,overgrowth,photoluminescence
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