Topological Insulators Based on Layers and Foils for Thermoelectric Microcooling Devices
2023 International Semiconductor Conference (CAS)(2023)
摘要
We preset the results of the study on thermoelectric properties and oscillatory effects layers and foils) based on p-type Bi
2
Te
3
topological insulators and n-type Bi
0.84
Sb 0.16 foils $(d=10-20\mu\mathrm{m})$. Analysis of the Shubnikov-de Haas oscillations of p-type Bi2 Te
3
single-crystal layers has confirmed the presence of surface states in layers with a high quantum charge carrier mobility of up to $20\times 10^{3} \mathrm{cm}^{2}/(\mathrm{Vs})$ and a Fermi surface anisotropy of $A=4$, which are characteristic of bulk topological insulator. It has been revealed that the thermal conductivity of the foils in a temperature range of 300-100 K remains constant. Based on a technology developed by the authors for forming unsupported p-type Bi
2
Te
3
single-crystal micro-layers and an n-type Bi
0.84
Sb
0.16
foils a device was constructed that provides a temperature gradient of $\Delta T=9\mathrm{~K}$ over an area of $0.01\mathrm{~cm}^{2}$. Structures based on Bi
2
Te
3
can be used to design miniature sensors for thermoelectric devices, such as thermoelectric coolers, in particular, for cooling a computer processor.
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关键词
topological insulators,bismuth telluride,microlayers,foil,thermoelectricity,microcooler.
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