Large-Area Growth of Ferroelectric 2D Γ-In2se3 Semiconductor by Spray Pyrolysis for Next-Generation Memory

In2Se3, 2D ferroelectric-semiconductor, is a promising candidate for next-generation memory device because of its outstanding electrical properties. However, the large-area manufacturing of In2Se3 is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large-area In2Se3 thin film. A polycrystalline gamma-In2Se3 layer can be grown on 15 cm x 15 cm glasss at the substrate temperature of 275 degrees C. The In2Se3 ferroelectric-semiconductor field effect transistor (FeS-FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the +/- 40 V of gate voltage sweep and excellent uniformity. The FeS-FET exhibits an electron field effect mobility of 0.97 cm(2) V-1 s(-1) and an on/off current ratio of >10(7) in the transfer curves. The memory behavior of the large-area, In2Se3 FeS-FETs for next-generation memory is demonstrated.