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Investigating the Properties of a New Lateral 4H-Sic Photoconductive Semiconductor Switch with a Stacked Structure

Huiru Sha,Longfei Xiao,Chongbiao Luan,Xun Sun,Yan Qin,Zhuoyun Feng,Yangfan Li,Jian Jiao,Xiufang Chen,Hongtao Li,Xiangang Xu

IEEE electron device letters（2023）

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Key words
4H silicon carbide (4H-SiC),photoconductive semiconductor switch (PCSS),gallium nitride epitaxial layer,stack structure
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