Radiation Hardness Evaluation of Ε-Ga2o3 Thin-Film Devices under Swift Heavy Ion Irradiation

Yongtao Yang,Yuanjun Tang,Fanyu Liu,Lei Wang,Fan Zhang,Tiejun Wang,Lei Shu,Zhenping Wu,Huiping Zhu,Bo Li, Danfeng Li

APPLIED SURFACE SCIENCE（2024）

引用 1|浏览31

暂无评分

摘要

•The radiation hardness of ε-Ga2O3 exposed to 1907 MeV Ta SHI irradiation was studied.•Structural analysis and DFT calculations reveal the presence of high-density extrinsic flux-induced defects.•A widening of the band gap in ε-Ga2O3 after Ta SHI irradiation is observed.•ε-Ga2O3 demonstrate outstanding radiation hardness to Ta SHI irradiation in terms of photoresponse performance.

查看译文

关键词

Swift heavy ion irradiation,ε-Ga2O3,Optoelectrical characteristics,Defect dynamics,Band structure,Radiation hardness

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要