Prospects of mist CVD for fabrication of beta-Ga2O3 MESFETs on beta-Ga2O3 (010) substrates

Mist CVD was applied to grow the ss-Ga2O3 channel layer of a MESFET on a semi- insulating ss-Ga(2)o(3) (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm(2) V-1 s(-1) and 6.2 x 10(17) cm(-3), respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of -9 V, and the maximum drain current was 240 mA mm(-1). The maximum transconductance was 46 mS mm(-1) and the onresistance was 30 Omega mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future. (c) 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd