HFXZR1-XO2 Ferroelectric Thin Film Grain Size Tuning Via Annealing Ramp Rate Achieving Endurance >109 Cycles, 2PR of 40.6μc/cm2, Write Voltage Down to 1.5 V, and Switching Speed of 30 NS
2023 China Semiconductor Technology International Conference (CSTIC)(2023)
摘要
The effect of annealing temperature ramp rate on the grain growth in $\mathrm{H}\mathrm{f}_{\mathrm{x}}\mathrm{Z}\mathrm{r}_{1-\mathrm{x}}\mathrm{O}$ (HZO) ferroelectric thin film is investigated. Using X-Ray Diffraction (XRD) characterization, we find that the ferroelectric phase grain size and uniformity can be improved when the temperature ramp rate is decreased. When fabricated in a MIM capacitor structure, the device can achieve $2P_{r}$ of $\sim 40.6\mu \mathrm{C}/\mathrm{c}\mathrm{m}^{2}$ better crystalline uniformity as compared to the other devices. Consequently, endurance exceeding $10^{9}$ cycles, 30 ns switching speed, polarization voltages down to 1.5V, and multi-states were demonstrated, paving the path for its use in high performance storage and computing applications.
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关键词
Annealing Ramp Rate,Ferroelectric,HZO
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