RF P-Gan HEMT with 0.9-Db Noise Figure and 12.8-Db Associated Gain for LNA Applications
IEEE electron device letters（2023）
Key words
HEMTs,Logic gates,Radio frequency,Performance evaluation,Noise figure,Gain,Metals,Enhancement-mode,gate leakage,HEMT,linearity,noise figure,p-GaN gate,RF low noise amplifier
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