On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications

Among phase-change materials, Ge-rich GeSbTe “alloys” show superior properties that make them suitable for embedded memory applications. In article number 2000471, Alain Claverie and co-workers show that these properties result from their tendency to separate and eventually crystallize into distinct Ge and GST phases. Both mechanisms are limited by Ge diffusion and may be slowed down by impurities such as nitrogen. Transport characteristics result from the possible percolation of carriers through these two-phase materials.