Silicon Nanowires Solar Cell

Xie Xiaobing,Zeng Xiangbo,Yao Wenjie,Yang Ping,Liu Shiyong,Peng Wenbo,Wang Chao,Zhang Xingwang,Zhu Hongliang,Wang Zhanguo

MRS proceedings/Materials Research Society symposia proceedings（2011）

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摘要

We made an amorphous-silicon (a-Si) solar cell with a nanowire-array structure on stainless steel(SS) by plasma enhanced chemical vapor (PECVD) deposition. This nanowire structure has an n-type Si nanowire array in which a-Si intrinsic layer and p type layer are sequentially grown on the surface of the nanowire. The highest open-circuit voltage (V oc ) and short-circuit current density (J sc ) for AM 1.5 illumination were 620 mV and 13.4 mA/cm 2 , respectively at a maximum power conversion efficiency of 3.57%.

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