Steep-Slope Negative Quantum Capacitance Field-Effect Transistor

Yafen Yang,Kai Zhang,Yi Gu,Parameswari Raju,Qiliang Li,Li Ji,Lin Chen,Dimitris E. Ioannou,Qingqing Sun,David Wei Zhang,Hao Zhu

2022 International Electron Devices Meeting (IEDM)（2022）

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关键词

C/int,electron system,field-effect transistor,low density of states,minimum subthreshold slope,MoS2/int,NQCFET,single-layer-graphene encapsulated,SL-graphene,steep-slope negative quantum capacitance,subthermionic steep switching

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