New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low V_th Drift at 85 oC and High Endurance 3D Crosspoint Memory

New phase-change materials (PCM) from single composite target, which is made of GST-225 and dopants "A+O (oxygen)" using special setup magnetron sputtering are systematically studied their potential for 3D crosspoint memory technology. The PCM's stable cycling endurance characteristic is the critical criterion to guarantee tight V-th distribution during write cycles. We propose a new PCM material for 3D crosspoint memory technology. The new material, with optimized concentration, integrated with high Indium doped AsSeGe selector, demonstrates a wide V-tS/V-tR memory window (similar to 1.5V memory window), stable 1E7 chips level write cycles (using 400ns SET box pulse time) and extremely low V-tS and V-tR drift characteristic (similar to 0V) at 85 degrees C/1 day in 256kbits (64kbits are tested) ADM memory arrays.