Formation of Copper-Related Deep-Level Centers in Irradiated P-Type Silicon

Solid State Phenomena（2011）

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摘要

Results of a DLTS study on the deep-level centers in the copper-contaminated electron-irradiated FZ-Si are presented. Copper was diffused from the Cu-contaminated surface into previously irradiated samples at 350K. The most abundant Cu-related complexes formed due to this procedure are the same as in the case of previously studied Cu-diffused Cz-Si.

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silicon,copper impurity,radiation defects

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