Investigation of Β-Ga2o3 Thick Films Grown on C-Plane Sapphire Via Carbothermal Reduction

We investigated the influence of the growth temperature, O-2 flow, molar ratio between Ga2O3 powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by a carbothermal reduction method. Experimental results for the heteroepitaxial growth of beta-Ga2O3 illustrate that beta-Ga2O3 growth by the carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050 degrees C. The fastest growth rate of beta-Ga2O3 films was produced when the O-2 flow was 20 sccm. To guarantee that beta-Ga2O3 films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga2O3 powder should be set at 10 : 1.