超快响应GaN半导体光导开关的研制

Semiconductor Technology(2022)

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Abstract
半导体光导开关(PCSS)利用半导体材料的高耐压、快速响应与高迁移率等特性,可产生大功率超窄脉冲信号.利用半绝缘GaN材料制备了异面斜对电极PCSS,通过去除芯片侧边金属化合物来减小暗态电阻,提升了 PCSS暗态耐压并降低暗态漏电,采用绝缘导热封装提升器件的耐压与可靠性,研制了快拆式测试电路与夹具,实现储能、触发与低寄生同轴输出功能,提升了高频测试准确度与高频响应能力.搭建了高压宽带PCSS测试系统,测量开关线性工作特性,在5 kV偏置电压、触发激光脉冲波长为532 nm、能量为5 mJ下,GaN PCSS在50 Ω负载上输出超快脉冲信号电压峰峰值大于2 kV,脉冲信号上升沿小于88 ps.
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